MemSilicon completes tape-out of MountTai 2026, a 1Gb 1T4R RRAM chip

What happened

MemSilicon announced on October 12 that it completed tape-out of MountTai 2026, its first-generation high-density RRAM chip based on the 1TnR approach, with validation underway. The company reports a 28nm CMOS process, a 1T4R structure, 1Gb capacity, 30Mb/mm² density, access latency below 20ns, and on-chip hardware error correction. Its architecture shares one selection transistor across four resistive memory cells to reduce transistor area overhead per cell.

The story so far

MemSilicon said it has completed tape-out of MountTai 2026, also called Taishan-1, its first-generation high-density RRAM chip based on the 1TnR approach, and validation is underway. The company reports that the chip uses a 28nm CMOS process and a 1T4R structure, with 1Gb capacity, a density of 30Mb/mm², access latency below 20ns and on-chip hardware error correction. The architecture shares one selection transistor across four resistive memory cells to reduce the transistor area overhead per cell.

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